Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots

A systematic study of a series InGaAs/GaAs lasers in the 1-1.3 μm optical range based on quantum wells (2D), dots (0D), and well-dots transitional (0D/2D) dimensionality is presented. In wide pump currents, dependences lasing wavelength layer gain constant, parameter which allows comparing with different types active region various waveguide designs, are measured analyzed. It shown that maximum significantly higher, rawavelengths achievable edge-emitting without external resonators wider than dots. Keywords: semiconductor laser, well, dots, well-dots, gain.